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| Semiconductor STA124M PNP Silicon Transistor Features * Suitable for low voltage large current drivers * High DC current gain and large current capability * Complementary pair with STC128M Ordering Information Type NO. STA124M Marking A124 Package Code TO-92M Outline Dimensions unit : mm 4.00.1 0.44 REF 0.52 REF 1.27 Typ. 2.540.1. 1 2 3 14.00.40 0.7 Typ. 3.00.1 3.8 Min. 0.42 Typ. 3.00.1 PIN Connections 1. Emitter 2. Collector 3. Base KST-I005-000 1 STA124M Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -15 -12 -6.5 -1 400 150 -55~150 Unit V V V A mW C C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Test Condition IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-15V, IE=0 VEB=-6V, IC=0 VCE=-1V, IC=-100mA IC=-500mA, IB=-50mA VCE=-5V, IC=-50mA VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -15 -12 -6.5 200 -0.2 260 5 -0.1 -0.1 450 -0.4 - Unit V V V A A V MHz pF KST-I005-000 2 STA124M Fig. 1 PC - Ta Fig. 2 IC - VBE Fig. 3 hFE-IC Fig. 4 VCE(sat)-IC KST-I005-000 3 |
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